Magnetoresistive element

ABSTRACT

According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Continuation of U.S. Ser. No. 13/963,654, filed Aug. 9, 2013,which claims the benefit of U.S. Provisional Application No. 61/804,002,filed Mar. 21, 2013, the entire contents of which are incorporatedherein by reference.

FIELD

Embodiments described herein relate generally to a magnetoresistiveelement.

BACKGROUND

A spin transfer magnetic random access memory (MRAM) comprising, as astorage element, a magnetoresistive element with a ferromagneticsubstance has been proposed. The MRAM is a memory that storesinformation by changing the direction of magnetization in a magneticlayer by a current transferred into the magnetoresistive element tocontrol the electrical resistance of the magnetoresistive elementbetween a high-resistance state and a low-resistance state.

The magnetoresistive element comprises a storage layer that is aferromagnetic layer with a variable direction of magnetization, areference layer that is a ferromagnetic layer with an invariabledirection of magnetization, and a tunnel barrier layer that is anonmagnetic layer formed between the storage layer and the referencelayer. The tunnel barrier layer is formed of an oxide film, for example,MgO. In this case, the characteristics of the magnetoresistive elementare affected depending on the distribution of concentration of oxygen(O) in the tunnel barrier layer (oxide film).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a memory cell in an MRAM;

FIG. 2 is a cross-sectional view of the structure of the memory cell inthe MRAM;

FIG. 3A is a cross-sectional view showing the structure of amagnetoresistive element;

FIG. 3B is a cross-sectional view of the magnetoresistive element in aparallel state, illustrating a write operation performed on themagnetoresistive element;

FIG. 3C is a cross-sectional view of the magnetoresistive element in ananti-parallel state, illustrating a write operation performed on themagnetoresistive element;

FIG. 4 is a cross-sectional view showing the structure of amagnetoresistive element according to a first embodiment;

FIG. 5 is a cross-sectional view showing the structure of amagnetoresistive element MTJ in a comparative example; and

FIG. 6 is a cross-sectional view showing the structure of amagnetoresistive element according to a second embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a magnetoresistive elementcomprises: a storage layer having perpendicular magnetic anisotropy withrespect to a film plane and having a variable direction ofmagnetization; a reference layer having perpendicular magneticanisotropy with respect to the film plane and having an invariabledirection of magnetization; a tunnel barrier layer formed between thestorage layer and the reference layer and containing O; and anunderlayer formed on a side of the storage layer opposite to the tunnelbarrier layer. The reference layer comprises a first reference layerformed on the tunnel barrier layer side and a second reference layerformed opposite the tunnel barrier layer. The second reference layer hasa higher standard electrode potential than the underlayer.

The present embodiment will be described below with reference to thedrawings. In the drawings, the same components are denoted by the samereference numbers. Furthermore, duplicate descriptions will be providedas necessary.

<MRAM Basic Configuration Example>

An example of basic configuration of an MRAM will be described belowwith reference to FIG. 1 to FIG. 3.

FIG. 1 is a circuit diagram showing a memory cell in the MRAM.

As shown in FIG. 1, a memory cell in a memory cell array MA comprises aseries connected unit with a magnetoresistive element MTJ and a switchelement (for example, an FET). One end of the series connected unit (oneend of the magnetoresistive element MTJ) is connected to a bit line BLA.The other end of the series connected unit (one end of the switchelement T) is connected to a bit line BLB. A control terminal of theswitch element T, for example, a gate electrode of the FET, is connectedto a word line WL.

The potential of the word line WL is controlled by a first controlcircuit 11. Furthermore, the potentials of the bit lines BLA and BLB arecontrolled by a second control circuit 12.

FIG. 2 is a cross-sectional view showing the structure of the memorycell in the MRAM.

As shown in FIG. 2, the memory cell comprises the switch element T andthe magnetoresistive element MTJ both disposed on a semiconductorsubstrate 21.

The semiconductor substrate 21 is, for example, a silicon substrate andmay have a P-type conductivity or an N-type conductivity. As isolationlayers 22, for example, silicon oxide (SiO₂) layers of an STI structureare disposed in the semiconductor substrate 21.

The switch element T is disposed in a surface area of the semiconductorsubstrate 21, specifically, in an element area (active area) surroundedby the isolation layers 22. In the present example, the switch element Tis an FET and comprises two source/drain diffusion layers 23 in thesemiconductor substrate 21 and a gate electrode 24 disposed on a channelarea between the source/drain diffusion layers 23. The gate electrode 24functions as the word line WL.

The switch element T is covered with an interlayer insulating layer (forexample, SiO₂) 25. A contact hole is formed in the interlayer insulatinglayer 25. A contact via 26 is disposed in the contact hole. The contactvia 26 is formed of a metal material, for example, W or Cu.

A lower surface of the contact via 26 is connected to the contact via26. In the present example, the contact via 26 is in direct contact withthe source/drain diffusion layers 23.

A lower electrode (LE) 27 is disposed on a lower surface of the contactvia 26. The lower electrode 27 comprises a stack structure of, forexample, Ta (10 nm), Ru (5 nm), and Ta (5 nm).

The magnetoresistive element MTJ is disposed on the lower electrode 27,that is, immediately above the contact via 26. The magnetoresistiveelement MTJ according to the first embodiment will be described below indetail.

An upper electrode (UE) 28 is disposed on the magnetoresistive elementMTJ. The upper electrode 28 is formed of, for example, TiN. The upperelectrode 28 is connected to the bit line (for example, Cu) BLA througha via (for example, Cu) 29.

FIG. 3A is a cross-sectional view showing the structure of themagnetoresistive element MTJ. Here, as the magnetoresistive element MTJ,a storage layer 31, a tunnel barrier layer 32, and a reference layer 33are mainly illustrated.

As shown in FIG. 3A, the magnetoresistive element MTJ includes thestorage layer 31 that is a ferromagnetic layer, the reference layer 33that is a ferromagnetic layer, and the tunnel barrier layer 32 that is anonmagnetic layer formed between the storage layer 31 and the referencelayer 33.

The storage layer 31 is a ferromagnetic layer with a variable directionof magnetization and has perpendicular magnetic anisotropy that isperpendicular or almost perpendicular to a film plane (uppersurface/lower surface). Here, the variable direction of magnetizationindicates that the direction of magnetization changes depending on apredetermined write current. Furthermore, being almost perpendicular tothe film plane means that the direction of residual magnetization iswithin the range of 45°<θ≦90°.

The tunnel barrier layer 32 is formed on the storage layer 31. Thetunnel barrier layer 32 is a nonmagnetic layer and is formed of, forexample, MgO.

The reference layer 33 is formed on the tunnel barrier layer 32. Thereference layer 33 is a ferromagnetic layer with an invariable directionof magnetization and has perpendicular magnetic anisotropy that isperpendicular or almost perpendicular to the film plane. Here, theinvariable direction of magnetization indicates that the direction ofmagnetization avoids changing depending on a predetermined writecurrent. That is, the reference layer 33 has a greater inversion energybarrier in the direction of magnetization than the storage layer 31.

FIG. 3B is a cross-sectional view of the magnetoresistive element MTJ ina parallel state, illustrating a write operation performed on themagnetoresistive element MTJ. FIG. 3C is a cross-sectional view of themagnetoresistive element MTJ in an anti-parallel state, illustrating awrite operation performed on the magnetoresistive element MTJ.

The magnetoresistive element MTJ is, for example, a spin transfermagnetoresistive element. Thus, if data is written to themagnetoresistive element MTJ or data is read from the magnetoresistiveelement MTJ, a current is passed bidirectionally through themagnetoresistive element MTJ in the directions perpendicular to the filmplane.

More specifically, data is written to the magnetoresistive element MTJas described below. If a current flows from the lower electrode 27 tothe upper electrode 28, that is, electrons are fed from the upperelectrode 28 side (the electrons are directed from the reference layer33 to the storage layer 31), electrons spin-polarized in the samedirection as the direction of magnetization in the reference layer 33are transferred into the storage layer 31. In this case, the directionof magnetization in the storage layer 31 is aligned with the directionof magnetization in the reference layer 33. This makes the direction ofmagnetization in the reference layer 33 and the direction ofmagnetization in the storage layer 31 parallel to each other. In thisparallel state, the magnetoresistive element MTJ has the smallestresistance. This case is defined as, for example, binary 0.

On the other hand, if a current flows from the upper electrode 28 to thelower electrode 27, that is, electrons are fed from the lower electrode27 side (the electrons are directed from the storage layer 31 to thereference layer 33), electrons spin-polarized in a direction opposite tothe direction of magnetization in the reference layer 33 by beingreflected by the reference layer 33 are transferred into the storagelayer 31. In this case, the direction of magnetization in the storagelayer 31 is aligned with the direction opposite to the direction ofmagnetization in the reference layer 33. This makes the direction ofmagnetization in the reference layer 33 and the direction ofmagnetization in the storage layer 31 anti-parallel to each other. Inthis anti-parallel state, the magnetoresistive element MTJ has thelargest resistance. This case is defined as, for example, binary 1.

Furthermore, data is read from the magnetoresistive element MTJ asdescribed below.

A read current is supplied to the magnetoresistive element MTJ. The readcurrent is set to prevent the direction of magnetization in the storagelayer 31 from being inverted (the read current is smaller than the writecurrent). Binary 0 and 1 can be read by detecting a change in theresistance of the magnetoresistive element MTJ at the time of thesetting of the read current.

First Embodiment

The magnetoresistive element MTJ according to a first embodiment will bedescribed with reference to FIG. 4 and FIG. 5. The first embodiment isan example in which the storage layer 31 with a high standard electrodepotential E and an underlayer 41 with a low standard electrode potentialE are formed below the tunnel barrier layer 32 and in which a firstreference layer 33A with a low standard electrode potential E and asecond reference layer 33B with a high standard electrode potential Eare formed above the tunnel barrier layer 32. Thus, the O concentrationin the tunnel barrier layer 32 can be made constant, allowing thereliability of the tunnel barrier layer 32 to be improved. The firstembodiment will be described below.

[Structure According to the First Embodiment]

The structure of the magnetoresistive element MTJ according to the firstembodiment will be described below with reference to FIG. 4.

FIG. 4 is a cross-sectional view showing the structure of themagnetoresistive element MTJ according to the first embodiment.

As shown in FIG. 4, the magnetoresistive element MTJ comprises theunderlayer 41, the storage layer 31, the tunnel barrier layer 32, thereference layer 33, an intermediate layer 42, and a shift cancellinglayer 43.

The underlayer 41 is formed on the lower electrode 27. The underlayer 41contains a nonmagnetic material having a lower standard electrodepotential E than the second reference layer 33B described below. Such anonmagnetic material may be, for example, Hf, but is not limited tothis. Examples of the nonmagnetic material include Hf, Ta, Nb, Al, Ti,and oxides or nitrides thereof. Alternatively, alloys or stack films ofthese materials may be used. Hf, Ta, Nb, Al, and Ti are −1.55, −0.60,−1.10, −1.66, and −1.63 V, respectively, in standard electrode potentialE.

Furthermore, the film thickness of the underlayer 41 is desirablygreater than the film thickness of the storage layer 31 and is, forexample, about 5 nm.

The storage layer 31 is formed on the underlayer 41. The storage layer31 contains ferromagnetic materials, for example, Co and Fe.Furthermore, B is added to the ferromagnetic materials in order toadjust saturation magnetization, magneto crystalline anisotropy, or thelike. That is, the storage layer 31 is formed of a compound, forexample, CoFeB. The storage layer 31 has a relatively high Coconcentration (is Co rich) in order to suppress oxidation of the storagelayer 31 (particularly Fe) in a process of oxidizing redeposits(reattachments) on a sidewall as described below. Here, being Co richrefers to having a Co ratio higher than stoichiometry.

The Co concentration of the Co—Fe alloy in the storage layer 31 ishigher than the Co concentration of the Co—Fe alloy in the firstreference layer 33A described below and is, for example, about 30 atm %or more and 70 atm % or less. Here, the concentration is mainlyindicative of an atomic ratio. Furthermore, the storage layer 31 isformed of a CoFeB alloy, but the Co concentration (or Fe concentration)is indicative of the rate of Co (Fe) in a composition of only Co and Fe.In other words, it is assumed herein that the Co concentration plus theFe concentration equals 100 atm %.

Furthermore, the film thickness of the storage layer 31 is desirablysmaller than the film thickness of the underlayer 41 and is, forexample, about 2 nm.

The tunnel barrier layer 32 is formed on the storage layer 31. Thetunnel barrier layer 32 contains a nonmagnetic material, for example,MgO. However, the tunnel barrier layer 32 is not limited to thenonmagnetic material but may contain a metal oxide such as Al₂O₃, MgAlO,ZnO, or TiO. The O concentration in the tunnel barrier layer 32 isconstant. In other words, the O concentration in the tunnel barrierlayer 32 is the same on the storage layer 31 side and on the referencelayer 33 side in the tunnel barrier layer 32.

The O concentration in the tunnel barrier layer 32 is not necessarily beconstant and may be higher either on the storage layer 31 side or on thereference layer 33 side in the tunnel barrier layer 32 to the degreethat the reliability of the tunnel barrier layer 32 is not degraded.Furthermore, the O concentration in the tunnel barrier layer 32 may behigher on the storage layer 31 side than on the reference layer 33 sidein order to increase the perpendicular magnetic anisotropy of thestorage layer 31.

Here, the constant O concentration includes an O concentration that issubstantially constant to the degree that various characteristics remainunchanged.

The reference layer 33 is formed on the tunnel barrier layer 32. Thereference layer 33 is formed of a first reference layer 33A on a lowerside and a second reference layer 33B on an upper side.

The first reference layer 33A is formed on the tunnel barrier layer 32.The reference layer 33A contains ferromagnetic materials, for example,Co and Fe. Furthermore, B is added to the ferromagnetic materials inorder to adjust saturation magnetization, magneto crystallineanisotropy, or the like. That is, like the storage layer 31, the firstreference layer 33A is formed of a compound, for example, CoFeB.

The first reference layer 33A has a relatively high Fe concentration (isFe rich) in order to increase perpendicular magnetic anisotropy. Here,being Fe rich refers to having an Fe ratio higher than stoichiometry.The Fe concentration of the Co—Fe alloy in the first reference layer 33Ais higher than the Fe concentration of the Co—Fe alloy in the storagelayer 31 and is, for example, about 70 atm % or more. Furthermore, thefilm thickness of the first reference layer 33A is desirably smallerthan the film thickness of the second reference layer 33B and is, forexample, about 1.5 nm.

Here, Fe is lower than Co in standard electrode potential E. Morespecifically, Fe is −0.45 V in standard electrode potential E, and Co is−0.28 V in standard electrode potential E. Thus, for the first referencelayer 33A and the storage layer 31, both of which are formed of CoFeB,the first reference layer 33A, which has a higher Fe concentration(lower Co concentration), has a lower standard electrode potential Ethan the storage layer 31, which has a lower Fe concentration (higher Coconcentration).

The second reference layer 33B is formed on the first reference layer33A. The second reference layer 33B contains a nonmagnetic materialhaving a higher standard electrode potential E than the underlayer 41.Such a nonmagnetic material may be Pt. Furthermore, the second referencelayer 33B contains a magnetic material, for example, Co. That is, thesecond reference layer 33B is formed of, for example, a stack film of Ptand Co. The stack film is formed by stacking a plurality of Pt layersand a plurality of Co layers on one another. The nonmagnetic materialwith the high standard electrode potential E is not limited to Pt butmay be Pd, Ru, or W. The standard electrode potentials of Pt, Pd, Ru,and W are 1.18 V, 0.95 V, 0.46 V, and 0.10 V, respectively.

Furthermore, the film thickness of the second reference layer 33B isgreater than the film thickness of the first reference layer 33A and is,for example, about 6 nm.

The shift cancelling layer 43 is formed on the reference layer 33(second reference layer 33B) via the intermediate layer 42. Theintermediate layer 42 contains a conductive material, for example, Ru.The shift cancelling layer 43 is a magnetic layer with an invariabledirection of magnetization and has perpendicular magnetic anisotropyperpendicular or almost perpendicular to the film plane. Furthermore,the direction of magnetization in the shift cancelling layer 43 isopposite to the direction of magnetization in the reference layer 33.This allows the shift cancelling layer 43 to cancel a leakage magneticfield leaking from the reference layer 33 to the storage layer 31. Inother words, the shift cancelling layer 43 is effective for adjusting anoffset of inversion characteristics of the storage layer 31 caused by aleakage magnetic field from the reference layer 33, to the oppositedirection. The shift cancelling layer 43 is formed of a superlattice orthe like comprising a stack structure of a magnetic material such as Ni,Fe, or Co and a nonmagnetic material such as Cu, Pd, or Pt. The upperelectrode 28 is formed on the shift cancelling layer 43.

As described above, according to the first embodiment, the storage layer31 with the high Co concentration (with the high standard electrodepotential E) and the underlayer 41 with the low standard electrodepotential E are formed below the tunnel barrier layer 32. Furthermore,the first reference layer 33A with the high Fe concentration (with thelow standard electrode potential E) and the second reference layer 33Bwith the high standard electrode potential E are formed above the tunnelbarrier layer 32. This enables a reduction in the potential (electricfield) applied to the tunnel barrier layer 32, allowing the Oconcentration in the tunnel barrier layer 32 to be made constant.

Although not shown in the drawings, an intermediate layer not shown inthe drawings (for example, Ta) may be formed between the first referencelayer 33A and the second reference layer 33B.

Furthermore, the underlayer 41, the storage layer 31, the tunnel barrierlayer 32, the reference layer 33, the intermediate layer 42, and theshift cancelling layer 43 all have a circular planar shape. Thus, themagnetoresistive element MTJ is formed like a pillar. However, theplanar shape of the magnetoresistive element MTJ is not limited to thepillar shape but may be a square, a rectangle, or an ellipse.

Additionally, the storage layer 31 and the reference layer 33 may differin planar dimensions. For example, the reference layer 33 may have asmaller planar diameter than the storage layer 31. As a sidewall of thereference layer 33, an insulating layer may be formed which is sized tobe equivalent to the difference in dimensions between the storage layer31 and the reference layer 33. This allows possible electrical shortcircuiting between the storage layer 31 and the reference layer 33 to beprevented.

In addition, the components of the magnetoresistive element MTJ may bearranged in reverse order. That is, the components may be formed on thelower electrode 27 in the following order: the shift cancelling layer43, the intermediate layer 42, the second reference layer 33B, the firstreference layer 33A, the tunnel barrier layer 32, the storage layer 31,and the underlayer 41.

[Method for Manufacturing According to the First Embodiment]

A method for manufacturing the magnetoresistive element MTJ according tothe first embodiment will be described below with reference to FIG. 4.

First, an underlayer 41 is formed on the lower electrode 27 by, forexample, a sputtering method. The underlayer 41 contains a nonmagneticmaterial having a lower standard electrode potential E than the secondreference layer 33B. Examples of the nonmagnetic material include Hf,Ta, Nb, Al, Ti, and oxides and nitrides thereof.

Then, a storage layer 31 is formed on the underlayer 41 by, for example,the sputtering method. The storage layer 31 is formed of, for example, acompound, for example, CoFeB. The storage layer 31 has a relatively highCo concentration in order to suppress oxidation of the storage layer 31(particularly Fe) in a process of oxidizing redeposits (reattachments)on a sidewall as described below.

Then, a tunnel barrier layer 32 is formed on the storage layer 31. Thetunnel barrier layer 32 contains a nonmagnetic material, for example,MgO. The tunnel barrier layer 32 is formed to have a constant Oconcentration therein. The MgO layer forming the tunnel barrier layer 32may be formed by directly depositing the MgO layer by the sputteringmethod targeted for MgO or depositing an Mg layer by the sputteringmethod targeted for Mg and then oxidizing the Mg layer. Desirably, foran increased magnetoresistive (MR) ratio, the MgO layer is directlydeposited by the sputtering method targeted for MgO.

Then, a first reference layer 33A is formed on the tunnel barrier layer32 by, for example, the sputtering method. Like the storage layer 31,the first reference layer 33A is formed of a compound, for example,CoFeB. The first reference layer 33A has a relatively high Feconcentration in order to increase perpendicular magnetic anisotropy.The Co—Fe alloy in the first reference layer 33A has a higher Feconcentration than the Co—Fe alloy in the storage layer 31.

Then, a second reference layer 33B is formed on the first referencelayer 33A by, for example, the sputtering method. The second referencelayer 33B contains a nonmagnetic material having a higher standardelectrode potential E than the underlayer 41. Such a nonmagneticmaterial may be Pt, Pd, Ru, or W. Furthermore, the second referencelayer 33B contains a magnetic material, for example, Co. That is, thesecond reference layer 33B is formed of a stack film of Pt and Co. Thestack film is formed by stacking a plurality of Pt layers and aplurality of Co layers on one another. Such a second reference layer 33Bis formed by changing the target of the sputtering method.

Then, an intermediate layer 42 formed of Ru is formed on the secondreference layer 33B by, for example, the sputtering method. A shiftcancelling layer 43 is formed on the intermediate layer 42. The shiftcancelling layer 43 is formed of a superlattice or the like comprising astack structure of a magnetic material such as Ni, Fe, or Co and anonmagnetic material such as Cu, Pd, or Pt.

Subsequently, each layer of the magnetoresistive element MTJ iscrystallized by annealing. At this time, O atoms migrate in the tunnelbarrier layer 32 in response to an electric field generated by thestandard electrode potentials of the layers formed above and below thetunnel barrier layer 32.

According to the first embodiment, the storage layer 31 with the highstandard electrode potential E and the underlayer 41 with the lowstandard electrode potential E are formed below the tunnel barrier layer32. Furthermore, the first reference layer 33A with the low standardelectrode potential E and the second reference layer 33B with the highstandard electrode potential E are formed above the tunnel barrier layer32. Thus, the electric field applied to the tunnel barrier layer 32 canbe reduced. This prevents the O atoms in the tunnel barrier layer 32from migrating, thus allowing a state present at the time of formationof the MgO layer (the state with a constant O concentration) to bemaintained.

The O concentration in the tunnel barrier layer 32 need not necessarilybe constant and may be higher either on the storage layer 31 side or onthe reference layer 33 side in the tunnel barrier layer 32 to the degreethat the reliability of the tunnel barrier layer 32 is not degraded.Furthermore, the O concentration in the tunnel barrier layer 32 may behigher on the storage layer 31 side than on the reference layer 33 sidein order to increase the perpendicular magnetic anisotropy of thestorage layer 31.

Then, a hard mask not shown in the drawings is formed on the shiftcancelling layer 43 and patterned so as to have, for example, a circularplanar shape. The hard mask is formed of a conductive metal material,for example, TiN. Furthermore, the hard mask is not limited to TiN butmay be formed of a film containing Ti, Ta, or W or a stack film of anyof Ti, Ta, and W. Thus, the hard mask need not be subsequently removedbut may be used as a contact section that contacts the upper electrode28.

Then, the shift cancelling layer 43, the intermediate layer 42, thereference layer 33, the tunnel barrier layer 32, the storage layer 31,and the underlayer 41 are processed by physical etching such as ion beametching (IBE) using the hard mask as a mask. Thus, the shift cancellinglayer 43, the intermediate layer 42, the reference layer 33, the tunnelbarrier layer 32, the storage layer 31, and the underlayer 41 arepatterned similarly to the hard mask so as to have a circular planarshape.

At this time, the material forming the underlayer 41 is formed asredeposits on the sidewall of the tunnel barrier layer 32. Theredeposits may cause short-circuiting between the storage layer 31 andthe reference layer 33.

Thus, after the shift cancelling layer 43, the intermediate layer 42,the reference layer 33, the tunnel barrier layer 32, the storage layer31, and the underlayer 41 are patterned, the redeposits formed on thesidewall of the tunnel barrier layer 32 are desirably oxidized into aninsulator.

Here, the storage layer 31, having lower perpendicular magneticanisotropy than the reference layer 33, contains Co-rich CoFeB. Co ismore likely to be oxidized than Fe. That is, in the present example, thestorage layer 31 is formed of Co-rich CoFeB to suppress the oxidation ofthe storage layer 31 (particularly Fe) in a redeposit oxidation process.Thus, the perpendicular magnetic anisotropy can be prevented from beingdegraded by the oxidation.

Subsequently, an interlayer insulating layer not shown in the drawingsand which is formed of, for example, SiO₂ is formed all over the surfaceof the magnetoresistive element MTJ by, for example, a CVD method. Thus,the interlayer insulating layer is buried between adjacentmagnetoresistive elements MTJ. Subsequently, the interlayer insulatinglayer formed on the magnetoresistive element MTJ is flattened and etchedback. This exposes an upper surface of the magnetoresistive element MTJ.An upper electrode 28 is formed on and electrically connected to theexposed magnetoresistive element MTJ.

As described above, the magnetoresistive element MTJ according to thefirst embodiment is formed.

Effects of the First Embodiment

According to the first embodiment, in the magnetoresistive element MTJ,the storage layer 31 with the high Co concentration (with the highstandard electrode potential E) and the underlayer 41 containing thematerial with the low standard electrode potential E are formed belowthe tunnel barrier layer 32. Furthermore, the first reference layer 33Awith the high Fe concentration (with the low standard electrodepotential E) and the second reference layer 33B containing the materialwith the low standard electrode potential E are formed above the tunnelbarrier layer 32. For example, Co, which is contained in the storagelayer 31 below the tunnel barrier layer 32 in a large amount, is −0.28 Vin standard electrode potential E, and Hf, which is contained in theunderlayer 41 below the tunnel barrier layer 32 in a large amount, is−1.55 V in standard electrode potential E. On the other hand, Fe, whichis contained in the first reference layer 33A above the tunnel barrierlayer 32 in a large amount, is −0.45 V in standard electrode potentialE, and Pt, which is contained in the second reference layer 33B abovethe tunnel barrier layer 32 in a large amount, is −1.18 V in standardelectrode potential E. Therefore, the following effects can be obtained.

FIG. 5 is a cross-sectional view showing the structure of amagnetoresistive element MTJ in a comparative example.

As shown in FIG. 5, the magnetoresistive element MTJ in the comparativeexample comprises a storage layer 31 with a high Co concentration (witha high standard electrode potential E [for example, −0.28 V]) formedbelow a tunnel barrier layer 32 and a first reference layer 33A with ahigh Fe concentration (with a low standard electrode potential E [forexample, −0.45 V]) formed above the tunnel barrier layer 32. That is,the standard electrode potentials E of an underlayer 41 and a secondreference layer 33B are not particularly adjusted.

In this case, when annealing is carried out during a manufacturingprocess, O atoms migrate in the tunnel barrier layer 32 in response toan electric field generated by the standard electrode potentials E ofthe storage layer 31 and the first reference layer 33A formed below andabove the tunnel barrier layer 32, respectively. More specifically, theO atoms migrate toward the first reference layer 33A side with the lowerstandard electrode potential E. Thus, the O concentration in the tunnelbarrier layer 32 is higher on the first reference layer 33A side. Inother words, the O concentration in the tunnel barrier layer 32 isprevented from being constant. This in turn prevents a constant electricfield from being applied to the tunnel barrier layer 32 when a currentis passed through the tunnel barrier layer 32. Therefore the reliabilityof the tunnel barrier layer 32 is degraded.

In contrast, according to the first embodiment, the underlayer 41containing the material with the low standard electrode potential E (forexample, −1.55 V) is formed on the storage layer 31 side of (below) thetunnel barrier layer 32, and the second reference layer 33B with thehigh standard electrode potential E (for example, −1.18 V) is formed onthe first reference layer 33A side of (above) the tunnel barrier layer32. Consequently, when annealing is carried out during the manufacturingprocess, the O atoms are prevented from migrating, thus allowing the Oconcentration in the tunnel barrier layer 32 to be made constant. As aresult, an electric field generated by the storage layer 31 and thefirst reference layer 33A can be cancelled, allowing an electric fieldapplied to the tunnel barrier layer 32 when a current is passed throughthe tunnel barrier layer 32 to be made constant. Therefore, thereliability of the tunnel barrier layer 32 can be improved.

The above-described effects are more significant when an MgO layer(tunnel barrier layer 32) is formed by depositing an Mg layer by thesputtering method targeted for Mg and then oxidizing the Mg layer.

Second Embodiment

A magnetoresistive element MTJ according to a second embodiment will bedescribed with reference to FIG. 6.

In the magnetoresistive element MTJ, if the underlayer 41 contains anonmagnetic material with low perpendicular magnetic anisotropy, thestorage layer 31, which is in contact with the underlayer 41, may havereduced perpendicular magnetic anisotropy of an insufficient magnitude.

In contrast, according to the second embodiment, the standard electrodepotentials of the layers located above and below the tunnel barrierlayer 32 serve to increase the O concentration on the storage layer 31side of the tunnel barrier layer 32. Thus, Fe atom in the storage layer31 and O atom can be bonded together to increase the perpendicularmagnetic anisotropy of the storage layer 31, improving thermal stability(data retention characteristics). The second embodiment will bedescribed below in detail.

Description of aspects of the second embodiment which are similar to thecorresponding aspects of the first embodiment is omitted, and mainlydifferences from the first embodiment will be described below.

[Structure According to the Second Embodiment]

The structure of the magnetoresistive element MTJ according to thesecond embodiment will be described below with reference to FIG. 6.

FIG. 6 is a cross-sectional view showing the structure of themagnetoresistive element MTJ according to the second embodiment.

As shown in FIG. 6, the second embodiment is different from the firstembodiment in that the storage layer 31 has a high Fe concentration anda standard electrode potential equivalent to the standard electrodepotential of the first reference layer 33A and in that the underlayer 41has low perpendicular magnetic anisotropy, whereas the second referencelayer 33B has high perpendicular magnetic anisotropy. The structure ofthe magnetoresistive element MTJ according to the second embodiment willbe described below in further detail.

The underlayer 41 contains a nonmagnetic material having a lowerstandard electrode potential E than the second reference layer 33B. Sucha nonmagnetic material may be, for example, Hf, but is not limited tothis. The nonmagnetic material may be Ta, Nb, Al, or Ti. Alternatively,the nonmagnetic material may be HfN, TaN, NbN, AlN, or TiN.Alternatively, alloys or stack films of these materials may be used.

Furthermore, these nonmagnetic materials have lower perpendicularmagnetic anisotropy than a nonmagnetic material forming the secondreference layer 33B described below. Thus, the storage layer 31, whichis in contact with the underlayer 41, has lower perpendicular magneticanisotropy than the first reference layer 33A, which is in contact withthe second reference layer 33B.

The storage layer 31 is formed on the underlayer 41. The storage layer31 contains ferromagnetic materials, for example, Co and Fe.Furthermore, B is added to the ferromagnetic materials in order toadjust saturation magnetization, magneto crystalline anisotropy, or thelike. That is, the storage layer 31 is formed of a compound, forexample, CoFeB. The storage layer 31 has a relatively high Feconcentration in order to increase perpendicular magnetic anisotropy.The Fe concentration of the Co—Fe alloy in the storage layer 31 is thesame as the Fe concentration of the Co—Fe alloy in the first referencelayer 33A and is, for example, about 70 atm % or more.

The tunnel barrier layer 32 is formed on the storage layer 31. Thetunnel barrier layer 32 contains a nonmagnetic material, for example,MgO. However, the tunnel barrier layer 32 is not limited to thenonmagnetic material but may contain a metal oxide such as Al₂O₃, MgAlO,ZnO, or TiO. The O concentration in the tunnel barrier layer 32 ishigher on the storage layer 31 side than on the first reference layer33A side.

The reference layer 33 is formed on the tunnel barrier layer 32. Thereference layer 33 is formed of a first reference layer 33A on a lowerside and a second reference layer 33B on an upper side.

The first reference layer 33A is formed on the tunnel barrier layer 32.The reference layer 33A contains ferromagnetic materials, for example,Co and Fe. Furthermore, B is added to the ferromagnetic materials inorder to adjust saturation magnetization, magneto crystallineanisotropy, or the like. That is, like the storage layer 31, the firstreference layer 33A is formed of a compound, for example, CoFeB. Thefirst reference layer 33A has a relatively high Fe concentration inorder to increase perpendicular magnetic anisotropy. The Feconcentration of the Co—Fe alloy in the first reference layer 33A is thesame as the Fe concentration of the Co—Fe alloy in the storage layer 31and is, for example, about 70 atm % or more. In other words, the firstreference layer 33A and the storage layer 31 have similar configurationsand similar composition ratios. Thus, the first reference layer 33A andthe storage layer 31 have relatively low, similar standard electrodepotentials.

Both the storage layer 31 and the first reference layer 33A may have arelatively high Co concentration instead of the relatively high Feconcentration. That is, the Co concentration of the Co—Fe alloy in thestorage layer 31 and the first reference layer 33A is about 30 atm % ormore and 70 atm % or less.

The second reference layer 33B is formed on the first reference layer33A. The second reference layer 33B contains a nonmagnetic materialhaving a higher standard electrode potential E than the underlayer 41.Such a nonmagnetic material may be Pt. Furthermore, the second referencelayer 33B contains a magnetic material, for example, Co. That is, thesecond reference layer 33B is formed of, for example, a stack film of Ptand Co. The stack film is formed by stacking a plurality of Pt layersand a plurality of Co layers on one another. The nonmagnetic materialwith the high standard electrode potential E is not limited to Pt butmay be Pd.

Furthermore, the nonmagnetic material (Pt or Pd) has higherperpendicular magnetic anisotropy than the nonmagnetic material formingthe underlayer 41. Thus, the first reference layer 33A, which is incontact with the second reference layer 33B, has higher perpendicularmagnetic anisotropy than the storage layer 31, which is in contact withthe underlayer 41.

As described above, according to the second embodiment, the storagelayer 31 with the high Fe concentration (with the low standard electrodepotential E) and the underlayer 41 with the low standard electrodepotential E are formed below the tunnel barrier layer 32. Furthermore,the first reference layer 33A with the high Fe concentration (with thelow standard electrode potential E) and the second reference layer 33Bwith the high standard electrode potential E are formed above the tunnelbarrier layer 32. This enables a reduction in the potential of the lowerside (storage layer 31 side) of the tunnel barrier layer 32 and anincrease in the O concentration of the lower side of the tunnel barrierlayer 32. As a result, the perpendicular magnetic anisotropy of thestorage layer 31 can be increased.

[Method for Manufacturing According to the Second Embodiment]

A method for manufacturing the magnetoresistive element MTJ according tothe second embodiment will be described below with reference to FIG. 6.

First, an underlayer 41 is formed on the lower electrode 27 by, forexample, the sputtering method. The underlayer 41 contains a nonmagneticmaterial having a lower standard electrode potential E than the secondreference layer 33B. The nonmagnetic material may be Hf, Ta, Nb, Al, Ti,HfN, TaN, NbN, AlN, or TiN. These nonmagnetic materials have lowerperpendicular magnetic anisotropy than a nonmagnetic material formingthe second reference layer 33B.

Then, a storage layer 31 is formed on the underlayer 41 by, for example,the sputtering method. The storage layer 31 is formed of a compound, forexample, CoFeB. The storage layer 31 has a relatively high Feconcentration in order to increase perpendicular magnetic anisotropy.

Then, a tunnel barrier layer 32 is formed on the storage layer 31. Thetunnel barrier layer 32 contains a nonmagnetic material, for example,MgO. The tunnel barrier layer 32 is formed to have a constant Oconcentration therein. The MgO layer forming the tunnel barrier layer 32may be formed by directly depositing the MgO layer by the sputteringmethod targeted for MgO or depositing an Mg layer by the sputteringmethod targeted for Mg and then oxidizing the Mg layer.

Then, a first reference layer 33A is formed on the tunnel barrier layer32 by, for example, the sputtering method. Like the storage layer 31,the first reference layer 33A is formed of a compound, for example,CoFeB. The first reference layer 33A has a relatively high Feconcentration in order to increase perpendicular magnetic anisotropy.The Co—Fe alloy in the first reference layer 33A has the same Feconcentration as that of the Co—Fe alloy in the storage layer 31. Inother words, the first reference layer 33B and the storage layer 31 havesimilar configurations and similar composition ratios. Thus, the firstreference layer 33A and the storage layer 31 have relatively low,similar standard electrode potentials.

Then, a second reference layer 33B is formed on the first referencelayer 33A by, for example, the sputtering method. The second referencelayer 33B contains a nonmagnetic material having a higher standardelectrode potential E than the underlayer 41. Such a nonmagneticmaterial may be Pt or Pd. Furthermore, the second reference layer 33Bcontains a magnetic material, for example, Co. That is, the secondreference layer 33B is formed of a stack film of Pt and Co. The stackfilm is formed by stacking a plurality of Pt layers and a plurality ofCo layers on one another. Such a second reference layer 33B is formed bychanging the target of the sputtering method.

Additionally, the nonmagnetic material (Pt or Pd) has higherperpendicular magnetic anisotropy than the nonmagnetic substance formingthe underlayer 41. Thus, the first reference layer 33A, which is incontact with the second reference layer 33B, has higher perpendicularmagnetic anisotropy than the storage layer 31, which is in contact withthe underlayer 41.

Then, an intermediate layer 42 formed of Ru is formed on the secondreference layer 33B by, for example, the sputtering method. A shiftcancelling layer 43 is formed on the intermediate layer 42. The shiftcancelling layer 43 is formed of a superlattice or the like comprising astack structure of a magnetic material such as Ni, Fe, or Co and anonmagnetic material such as Cu, Pd, or Pt.

Then, a hard mask not shown in the drawings is formed on the shiftcancelling layer 43 and patterned so as to have, for example, a circularplanar shape. The hard mask is formed of a conductive metal material,for example, TiN. Furthermore, the hard mask is not limited to TiN butmay be formed of a film containing Ti, Ta, or W or a stack film of anyof Ti, Ta, and W. Thus, the hard mask need not be subsequently removedbut may be used as a contact section that contacts the upper electrode28.

Then, the shift cancelling layer 43, the intermediate layer 42, thereference layer 33, the tunnel barrier layer 32, the storage layer 31,and the underlayer 41 are processed by physical etching such as ion beametching (IBE) using the hard mask as a mask. Thus, the shift cancellinglayer 43, the intermediate layer 42, the reference layer 33, the tunnelbarrier layer 32, the storage layer 31, and the underlayer 41 arepatterned similarly to the hard mask so as to have a circular planarshape.

Subsequently, an interlayer insulating layer not shown in the drawingsand which is formed of, for example, SiO₂ is formed all over the surfaceof the magnetoresistive element MTJ by, for example, the CVD method.Thus, the interlayer insulating layer is buried between adjacentmagnetoresistive elements MTJ. Subsequently, the interlayer insulatinglayer formed on the magnetoresistive element MTJ is flattened and etchedback. This exposes an upper surface of the magnetoresistive element MTJ.An upper electrode 28 is formed on and electrically connected to theexposed magnetoresistive element MTJ.

Subsequently, each layer of the magnetoresistive element MTJ iscrystallized by annealing. At this time, O atoms migrate in the tunnelbarrier layer 32 in response to an electric field generated by thestandard electrode potentials of the layers formed above and below thetunnel barrier layer 32.

According to the second embodiment, the first reference layer 33A andthe storage layer 31, which have an equivalent standard electrodepotential, are formed above and below the tunnel barrier layer 32,respectively. Moreover, the second reference layer 33B with the highstandard electrode potential E is formed above the first reference layer33A. The underlayer 41 with the low standard electrode potential E isformed below the storage layer 31. That is, the storage layer 31 side(lower side) of the tunnel barrier layer 32 has a reduced standardelectrode potential E, resulting in an electric field in the tunnelbarrier layer 32. As a result, the O atoms in the tunnel barrier layer32 migrate toward the storage layer 31 side with the low standardelectrode potential E and bond to the Fe atoms in the storage layer 31.This enables an increase in the perpendicular magnetic anisotropy of thestorage layer 31.

As described above, the magnetoresistive element MTJ according to thesecond embodiment is formed.

Effects According to the Second Embodiment

In the magnetoresistive element MTJ, if the underlayer 41 contains anonmagnetic material with low perpendicular magnetic anisotropy, thestorage layer 31, which is in contact with the underlayer 41, may havereduced perpendicular magnetic anisotropy of an insufficient magnitude.

In contrast, according to the second embodiment, the storage layer 31has an Fe concentration higher than in the first embodiment. Thus,compared to the first embodiment, the second embodiment enables anincrease in the perpendicular magnetic anisotropy of the storage layer31.

Furthermore, the first reference layer 33A and the storage layer 31,which are equivalent in standard electrode potential, are formed on thetunnel barrier layer 32. Moreover, the second reference layer 33Bcontaining the nonmagnetic material with the high standard electrodepotential E is formed above the first reference layer 33A. Thenonmagnetic material with the low standard electrode potential E isformed below the storage layer 31. This reduces the standard electrodepotential E of the storage layer 31 side (lower side) of the tunnelbarrier layer 32, resulting in an electric field in the tunnel barrierlayer 32. Thus, during the manufacturing process, the O atoms in thetunnel barrier layer 32 migrate toward the storage layer 31 side withthe low standard electrode potential E and bond to the Fe atoms in thestorage layer 31. This enables an increase in the perpendicular magneticanisotropy of the storage layer 31 and allows the thermal stability ofthe storage layer 31 to be improved.

At this time, the second reference layer 33B containing the nonmagneticmaterial (Pt or Pd) with the high perpendicular magnetic anisotropy isformed on the first reference layer 33A. Thus, even with the Oconcentration on the first reference layer 33A side of the tunnelbarrier layer 32 reduced, the first reference layer 33A has sufficientperpendicular magnetic anisotropy.

Each of the above described MTJ structures can be introduced as MTJelements of memory cells. Memory cells, memory cell arrays and memorydevices are disclosed in U.S. patent application Ser. No. 13/420,106,Asao, the entire contents of which are incorporated by reference herein.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A magnetic random access memory comprising: afirst nonmagnetic layer containing at least one of Hf, Ta, Nb, Al, andTi; a first magnetic layer provide on the first nonmagnetic layer andcontaining a magnetic material; a second nonmagnetic layer provided onthe first magnetic layer and containing O; a second magnetic layerprovided on the second nonmagnetic layer and containing the magneticmaterial, the magnetic material in the second magnetic layer and themagnetic material in the first magnetic layer being same inconcentration; and a third magnetic layer provided on the secondmagnetic layer and including Pt or Pd.
 2. The memory of claim 1, whereinthe first magnetic layer constitutes a storage layer.
 3. The memory ofclaim 2, wherein the storage layer has perpendicular magnetic anisotropywith respect to a film plane, and has a variable direction ofmagnetization.
 4. The memory of claim 1, wherein the second and thirdmagnetic layers constitute a reference layer.
 5. The memory of claim 1,wherein the reference layer has perpendicular magnetic anisotropy withrespect to a film plane, and has an invariable direction ofmagnetization
 6. The memory of claim 1, wherein the second nonmagneticlayer constitutes a tunnel barrier layer.
 7. The memory of claim 1,wherein an O concentration in the second nonmagnetic layer is higher onthe first magnetic layer side than on the second magnetic layer side. 8.The memory of claim 1, wherein the first nonmagnetic layer has a greaterfilm thickness than the first magnetic layer.
 9. The memory of claim 1,wherein the second nonmagnetic layer contains MgO, Al₂O₃, MgAlO, ZnO, orTiO.
 10. The memory of claim 1, wherein the magnetic material in thefirst magnetic layer and the magnetic material in the second magneticlayer contain Co or Fe.
 11. The memory of claim 1, wherein the thirdmagnetic layer has a greater film thickness than the second magneticlayer.
 12. The memory of claim 1, further comprising first and secondelectrodes, and wherein the first electrode is provided on the firstnonmagnetic layer, and the second electrode is provided on the thirdmagnetic layer.
 13. The memory of claim 1, further comprising a fourthmagnetic layer provided on the third magnetic layer.
 14. The memory ofclaim 13, wherein the fourth magnetic layer constitutes a shiftcancelling layer.
 15. The memory of claim 13, further comprising a thirdnonmagnetic layer provided between the third and fourth magnetic layers.16. The memory of claim 15, wherein the third nonmagnetic layer containsa conductive material.
 17. The memory of claim 16, wherein theconductive material comprises Ru.
 18. The memory of claim 1, wherein thefirst nonmagnetic layer further contains at least one of O and N.